Document Type

Thesis - Open Access

Award Date

1968

Degree Name

Master of Science (MS)

Department

Electrical Engineering

Abstract

Recently, due to advances in fabrication techniques, it has become possible to manufacture field-effect transistors having electrical properties which make them very attractive for circuit applications. In the bipolar transistor both positive and negative free carriers take part in the functioning of the device; hence the name bipolar. On the other hand, in unipolar devices, the current is carried only by the free majority carriers in the conducting channel and no essential role is played by the small number of minority carriers; hence the name unipolar. The purpose of this paper is to study the applicability of the describing-function method to field-effect transistors employed in RC phase-shift oscillators. The major concerns in oscillator design are frequency precision and stability and amplitude of oscillation. Also, a design method is presented for the phase-shift oscillator with prescribed frequency and amplitude by using describing functions. Because oscillating condition varies with the operating points of the field-effect transistor, some discussion is included concerning reduction of this effect.

Library of Congress Subject Headings

Oscillators, Electric
Transistors
Oscillators, Transistor

Format

application/pdf

Publisher

South Dakota State University

Share

COinS