Thesis - Open Access
Master of Science (MS)
Recently, due to advances in fabrication techniques, it has become possible to manufacture field-effect transistors having electrical properties which make them very attractive for circuit applications. In the bipolar transistor both positive and negative free carriers take part in the functioning of the device; hence the name bipolar. On the other hand, in unipolar devices, the current is carried only by the free majority carriers in the conducting channel and no essential role is played by the small number of minority carriers; hence the name unipolar. The purpose of this paper is to study the applicability of the describing-function method to field-effect transistors employed in RC phase-shift oscillators. The major concerns in oscillator design are frequency precision and stability and amplitude of oscillation. Also, a design method is presented for the phase-shift oscillator with prescribed frequency and amplitude by using describing functions. Because oscillating condition varies with the operating points of the field-effect transistor, some discussion is included concerning reduction of this effect.
Library of Congress Subject Headings
South Dakota State University
Chang, Edward C. H., "Describing Function Analysis of the Field-effect Transistor Oscillator" (1968). Electronic Theses and Dissertations. 3424.