Thesis - Open Access
Master of Science (MS)
Electrical Engineering and Computer Science
Electrochemical Anodization, Etching, Porosity, Porous Silicon, Reflectance, Supercapacitor
Porous silicon has exhibited lower reflectance and higher surface area than the pristine silicon. This property of porous silicon can be applied to photovoltaic (PV) application for more efficient silicon solar cells and for higher performance of supercapacitors. NH4Fl electrolytic etching solution has been used to fabricate porous silicon, but the control of pore morphology of silicon is achieved only by controlling the time. Therefore, it is urgently required to use other etching parameters such as voltage and current to achieve flexible control of pore properties. Porous silicon can also be used to fabricate supercapacitors. An established approach to make it applicable for higher performance supercapacitors is to passivate of the surface and modify its surface properties. In this report, porous silicon has been fabricated by electrochemical anodization method using a non-toxic ammonium-fluoride (NH4Fl) based electrolytic solution. Control of pore characteristic has been achieved by flexible control of etching parameters such as voltage, current and time. Higher performance supercapacitors have been made by passivating the porous silicon surface with a thin layer of gold deposition.
Library of Congress Subject Headings
Includes bibliographical references (pages 83-89)
Number of Pages
South Dakota State University
In Copyright - Educational Use Permitted
Saha, Utpal, "Control of Pore Characteristics of Porous Silicon Using Non-toxic Electrochemical Etching for Photovoltaics and Supercapacitor Applications" (2017). Electronic Theses and Dissertations. 1676.