Thesis - Open Access
Master of Science (MS)
The large signal behavior of electronic devices has long been a topic of concern to the electronic engineer. This. Large signal behavior is an important characteristic of digital, pulse and switching circuits as used in computers and data processing systems. During the past few years, considerable attention has been given to the derivation of computer models for the solid state devices used in digital systems. By using such models, one can predict the behavior of a device under given conditions without relying exclusively upon experimental observation A device which is currently corning into its own is the metal oxide semiconductor field-effect transistor, or MOSFET. In the MOSFET, surface conductivity is controlled by a strong electric field; thus it is a voltage-dependent device rather than a current-amplifying structure as is the conventional junction transistor. Although the theory of operation dates back to the work of Lilienfeld in 1930, a method of fabricating the device was not developed until the 1950 1 s and the MOSFET did not become commercially-available until the early 1960. Some of the characteristics which make the MOSFET superior to the vacuum tube and bipolar transistor are a very large input impedance, low self-generated noise, and superior thermal stability. The MOSFET also holds an advantage over its counterpart, the junction FET, because its input impedance is independent of the applied voltage, even at very high temperatures. Thus it can function with very large bias resistors in analog circuits and direct coupling in digital circuits is simplified.
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Number of Pages
South Dakota State University
Golnitz, Marlin H., "Piecewise-linear Models for MOSFET Large-signal Operation" (1969). Electronic Theses and Dissertations. 3540.