Document Type

Thesis - Open Access

Award Date


Degree Name

Master of Science (MS)

Department / School

Electrical Engineering


This research is concerned with the study of some monolithic circuit components--resistors and the p-n junctions of diodes and transistors. Because of the parasitic effects, these studies are original and valuable. The thesis is arranged in three sections. The first section is devoted to the parasitic effects in diffused resistors. The objective of the research was to find a suitable theoretical model for resistors which will predict input impedance magnitude and phase responses based on experimental observations. Some of the literature available on the parasitic effects in diffused resistors discusses the impedance magnitude response. Phase studies showing the nature of variation of phase with frequency for actual resistors were not available. In this thesis phase studies are included because they provide important information helpful in determining suitable models for resistors. The second section is concerned with the study of parasitic junction capacitances in diodes. Commonly, diodes are obtained using one p-n junction of a transistor. There are several possible diode connections when a transistor is used. This type of study is intended to give an insight into various junction capacitances and their total contribution in a diode. Since the simple models considered did not compare favorably with experimental results, a different comparison is made. These diodes were compared to the diodes connected from transistors on the chip. The nature of variation of capacitances when connected in different configurations are compared for the two types of diodes. The study is concluded with the discussion of d-e characteristics of three p-n junctions which exist in a transistor, namely, emitter-base, base-collector and collector-substrate. The research starts with comparisons of the d-e characteristics of these junctions; it is ended with consideration of d-e V-I characteristics of an individual p-n junction. The inherent parasitic junction capacitance of diffused resistors may sometimes be used to an advantage. In some applications, such as the coupling resistor of a flip-flop circuit, a small speed up capacitor is usually placed in the parallel with the resistor. Since the diffused resistor has some parasitic capacitance, it may be used as the speed up capacitor. It is assumed that this research will provide useful information for persons involved in designing circuits using monolithic components.

Library of Congress Subject Headings

Electric resistors
Transistor circuts



Number of Pages



South Dakota State University